Hydrogen and Deuterium Incorporation in ZnO Films Grown by Atomic Layer Deposition

Zinc oxide (ZnO) thin films were grown by atomic layer deposition using diethylzinc (DEZ) and water. In addition to depositions with normal water, heavy water (2H2O) was used in order study the reaction mechanisms hydrogen incorporation at different temperatures from 30 200 ?C. The total concentration found increase as temperature decreased. When decreased close room temperature, main source of impurity changed 1H 2H. A sufficiently long purging time isotope incorporated film back 1H. multiple short pulse scheme transient steric hindrance. addition, effect storage samples ambient conditions studied. During storage, deuterium while increased an equal amount, indicating that there exchange H2 and/or H2O.